Taiwan Semiconductor Corporation TSM9N90ECZ C0G

Product Details

Vgs (Max)

±30V

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

340pF @ 100V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-247-3

Base Part Number

STW9N

Vgs(th) (Max) @ Id

5V @ 100µA

Operating Temperature

-55°C ~ 150°C (TJ)

Series

MDmesh™ K5

Rds On (Max) @ Id, Vgs

900mOhm @ 3.5A, 10V

FET Type

N-Channel

Power Dissipation (Max)

110W (Tc)

Packaging

Tube

Supplier Device Package

TO-247