Images are for reference only. See Product Specifications for product details
Taiwan Semiconductor Corporation TSM900N06CH X0G
MOSFET N-CHANNEL 60V 11A TO251
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.48
- Stock
- 13507
Product Details
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 60nC @ 4.5V
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4044pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 11A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 14mOhm @ 11A, 4.5V
- Series
- PowerTrench®
- Power Dissipation (Max)
- 2.5W (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- 8-SOIC