Taiwan Semiconductor Corporation TSM8N50CH C5G

Product Details

FET Type

N-Channel

Supplier Device Package

TO-252, (D-Pak)

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

26.6nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

500V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1595pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

7.2A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

850mOhm @ 3.6A, 10V

Series

-

Power Dissipation (Max)

89W (Tc)