Taiwan Semiconductor Corporation TSM85N10CZ C0G

Product Details

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Part Status

Active

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Vgs(th) (Max) @ Id

2.4V @ 10mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

350mOhm @ 4A, 10V

Series

-

Power Dissipation (Max)

740mW (Tc)

FET Type

N-Channel

Supplier Device Package

TO-92-3

Packaging

Bulk

Drain to Source Voltage (Vdss)

100V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

500pF @ 25V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

1.2A (Tj)