Taiwan Semiconductor Corporation TSM80N950CH C5G

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

795pF @ 100V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

9.5A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-50°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

380mOhm @ 2.85A, 10V

Series

-

Power Dissipation (Max)

83W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-251 (IPAK)

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

19.4nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

600V