Taiwan Semiconductor Corporation TSM80N1R2CP ROG

Product Details

FET Feature

-

Part Status

Active

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Vgs(th) (Max) @ Id

1.4V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

10.5mOhm @ 12.6A, 10V

Series

TrenchFET®

Power Dissipation (Max)

1.5W (Ta)

FET Type

P-Channel

Gate Charge (Qg) (Max) @ Vgs

70nC @ 4.5V

Packaging

Digi-Reel®

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±12V

Current - Continuous Drain (Id) @ 25°C

9.7A (Ta)

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

10V