Images are for reference only. See Product Specifications for product details
Taiwan Semiconductor Corporation TSM80N1R2CL C0G
MOSFET N-CH 800V 5.5A TO262S
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.93
- Stock
- 0
Product Details
- Series
- OptiMOS™
- Power Dissipation (Max)
- 107W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-TO262-3
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 49nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 120V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 3220pF @ 60V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 56A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Vgs(th) (Max) @ Id
- 4V @ 61µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 14.7mOhm @ 56A, 10V