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Taiwan Semiconductor Corporation TSM80N1R2CH C5G
MOSFET N-CH 800V 5.5A TO251
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 1.51
- Stock
- 3730
Product Details
- FET Type
- N-Channel
- Power Dissipation (Max)
- 5W (Ta), 100W (Tc)
- Packaging
- Digi-Reel®
- Supplier Device Package
- PowerFlat™ (5x6)
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 39nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 100V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 3550pF @ 50V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 70A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- 8-PowerVDFN
- Base Part Number
- STL90
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- 175°C (TJ)
- Series
- DeepGATE™, STripFET™ VII
- Rds On (Max) @ Id, Vgs
- 10.5mOhm @ 8A, 10V