Taiwan Semiconductor Corporation TSM7NC65CF C0G

Product Details

FET Type

N-Channel

Supplier Device Package

PowerPAK® 8 x 8

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

195nC @ 4.5V

Vgs (Max)

+20V, -16V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

20330pF @ 20V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

200A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Vgs(th) (Max) @ Id

2.3V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

0.96mOhm @ 20A, 10V

Series

TrenchFET® Gen IV

Power Dissipation (Max)

158W (Tc)