Images are for reference only. See Product Specifications for product details

Taiwan Semiconductor Corporation TSM7N90CI C0G

MOSFET N-CHANNEL 900V 7A ITO220

Manufacturer
Taiwan Semiconductor Corporation
Datasheet
Price
2.85
Stock
1998

Product Details

Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ Id
4V @ 1mA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
1.8mOhm @ 25A, 10V
Series
Automotive, AEC-Q101, TrenchMOS™
Power Dissipation (Max)
349W (Tc)
FET Type
N-Channel
Supplier Device Package
I2PAK
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
145nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
40V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
11340pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
120A (Tc)