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Taiwan Semiconductor Corporation TSM650N15CR RLG
MOSFET N-CH 150V 24A 8PDFN
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 3460
Product Details
- Vgs(th) (Max) @ Id
- 1.8V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 18.5mOhm @ 10A, 10V
- Power Dissipation (Max)
- 1.5W (Ta)
- Series
- TrenchFET®
- Supplier Device Package
- PowerPAK® 1212-8
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 13nC @ 5V
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 6.5A (Ta)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® 1212-8