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Taiwan Semiconductor Corporation TSM60NB600CH C5G
MOSFET N-CHANNEL 600V 7A TO251
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.53
- Stock
- 0
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 6.5mOhm @ 15A, 10V
- Series
- SkyFET®, TrenchFET®
- Power Dissipation (Max)
- 3W (Ta), 5.9W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 8-SO
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 100nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4190pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 22.4A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 2.7V @ 1mA