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Taiwan Semiconductor Corporation TSM60NB380CH C5G
MOSFET N-CH 600V 9.5A TO251
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 1.58
- Stock
- 3736
Product Details
- Rds On (Max) @ Id, Vgs
- 600mOhm @ 3.4A, 10V
- Series
- CoolMOS™ P7
- Power Dissipation (Max)
- 60W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-TO251-3
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 20nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 800V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 570pF @ 500V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 8A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Vgs(th) (Max) @ Id
- 3.5V @ 170µA
- Operating Temperature
- -55°C ~ 150°C (TJ)