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Taiwan Semiconductor Corporation TSM60NB1R4CP ROG
MOSFET N-CHANNEL 600V 3A TO252
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 2313
Product Details
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 270pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 5.1A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 500mOhm @ 3.1A, 10V
- Series
- -
- Power Dissipation (Max)
- 2.5W (Ta), 25W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- D-Pak
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 12nC @ 10V