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Taiwan Semiconductor Corporation TSM60NB190CM2 RNG

MOSFET N-CH 600V 18A TO263

Manufacturer
Taiwan Semiconductor Corporation
Datasheet
Price
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Stock
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Product Details

Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number
STH145
Vgs(th) (Max) @ Id
4.5V @ 250µA
Operating Temperature
-55°C ~ 175°C (TJ)
Series
Automotive, AEC-Q101, STripFET™ F7
Rds On (Max) @ Id, Vgs
4mOhm @ 45A, 10V
FET Type
N-Channel
Power Dissipation (Max)
200W (Tc)
Packaging
Digi-Reel®
Supplier Device Package
H2Pak-2
Vgs (Max)
±20V
Gate Charge (Qg) (Max) @ Vgs
96nC @ 10V
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80V
FET Feature
-
Input Capacitance (Ciss) (Max) @ Vds
6340pF @ 40V
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Mounting Type
Surface Mount
Drive Voltage (Max Rds On, Min Rds On)
10V