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Taiwan Semiconductor Corporation TSM60NB099PW C1G
MOSFET N-CHANNEL 600V 38A TO247
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 6.68
- Stock
- 1988
Product Details
- Series
- MDmesh™ V
- Rds On (Max) @ Id, Vgs
- 139mOhm @ 11A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 140W (Tc)
- Packaging
- Tube
- Supplier Device Package
- I2PAK
- Vgs (Max)
- ±25V
- Gate Charge (Qg) (Max) @ Vgs
- 64nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 650V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 2880pF @ 100V
- Part Status
- Obsolete
- Current - Continuous Drain (Id) @ 25°C
- 22A (Tc)
- Mounting Type
- Through Hole
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Base Part Number
- STI30N
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Operating Temperature
- 150°C (TJ)