Images are for reference only. See Product Specifications for product details
Taiwan Semiconductor Corporation TSM60NB041PW C1G
MOSFET N-CHANNEL 600V 78A TO247
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 11.71
- Stock
- 2573
Product Details
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 9.3nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 650V
- Technology
- GaNFET (Gallium Nitride)
- Input Capacitance (Ciss) (Max) @ Vds
- 600pF @ 400V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 25A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- 3-PowerDFN
- Vgs(th) (Max) @ Id
- 4.8V @ 700µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 85mOhm @ 16A, 10V
- Power Dissipation (Max)
- 96W (Tc)
- Series
- TP65H070L
- Supplier Device Package
- 3-PQFN (8x8)