Taiwan Semiconductor Corporation TSM60N750CH C5G

Product Details

Rds On (Max) @ Id, Vgs

1.6mOhm @ 20A, 10V

Series

AlphaSGT™

Power Dissipation (Max)

6.2W (Ta), 119W (Tc)

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

105nC @ 10V

Packaging

Tape & Reel (TR)

Drain to Source Voltage (Vdss)

40V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5570pF @ 20V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

49A (Ta), 85A (Tc)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Part Status

Active

Mounting Type

Surface Mount

Package / Case

8-PowerVDFN

Vgs(th) (Max) @ Id

2.3V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)