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Taiwan Semiconductor Corporation TSM600P03CS RLG
MOSFET P-CHANNEL 30V 4.7A 8SOP
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.41
- Stock
- 4963
Product Details
- Series
- -
- Power Dissipation (Max)
- 800W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PLUS264™
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 550nC @ 20V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 500V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 11500pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 62A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 20V
- Mounting Type
- Through Hole
- Package / Case
- TO-264-3, TO-264AA
- Vgs(th) (Max) @ Id
- 5.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 100mOhm @ 31A, 20V