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Taiwan Semiconductor Corporation TSM4NB65CH C5G
MOSFET N-CHANNEL 650V 4A TO251
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.78
- Stock
- 10538
Product Details
- Rds On (Max) @ Id, Vgs
- 4.3mOhm @ 32.5A, 10V
- Series
- U-MOSVIII-H
- Power Dissipation (Max)
- 107W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- DPAK+
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 39nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 40V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2550pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 65A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 2.5V @ 300µA
- Operating Temperature
- 175°C (TJ)