Taiwan Semiconductor Corporation TSM4N80CZ C0G

Product Details

FET Type

N-Channel

Supplier Device Package

TO-220-3F

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

80V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3142pF @ 40V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

13.5A (Ta), 56A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Vgs(th) (Max) @ Id

3.3V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

6mOhm @ 20A, 10V

Series

-

Power Dissipation (Max)

2.2W (Ta), 37.5W (Tc)