Taiwan Semiconductor Corporation TSM3N90CH C5G

Product Details

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Vgs(th) (Max) @ Id

3.5V @ 140µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

750mOhm @ 2.7A, 10V

Series

CoolMOS™ P7

Power Dissipation (Max)

51W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO251-3

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

800V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

460pF @ 500V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

7A (Tc)