Taiwan Semiconductor Corporation TSM3N80CI C0G

Product Details

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

31mOhm @ 14A, 10V

Series

HEXFET®

Power Dissipation (Max)

2.5W (Ta), 41W (Tc)

FET Type

N-Channel

Supplier Device Package

DIRECTFET™ SC

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

910pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

5.9A (Ta), 24A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric SC

Vgs(th) (Max) @ Id

5V @ 50µA