Taiwan Semiconductor Corporation TSM2N60SCW RPG

Product Details

FET Feature

Schottky Diode (Isolated)

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Mounting Type

Surface Mount

Package / Case

SOT-23-5 Thin, TSOT-23-5

Vgs(th) (Max) @ Id

2V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

125mOhm @ 2A, 4.5V

Series

-

Power Dissipation (Max)

1.25W (Ta)

FET Type

P-Channel

Supplier Device Package

TSMT5

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

4.8nC @ 4.5V

Vgs (Max)

±12V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

450pF @ 10V