Taiwan Semiconductor Corporation TSM2N100CH C5G

Product Details

FET Type

N-Channel

Supplier Device Package

PG-TDSON-8-1

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

108nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

8800pF @ 20V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

30A (Ta), 100A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Vgs(th) (Max) @ Id

4V @ 85µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

1.7mOhm @ 50A, 10V

Series

OptiMOS™

Power Dissipation (Max)

2.5W (Ta), 139W (Tc)