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Taiwan Semiconductor Corporation TSM230N06CI C0G
MOSFET N-CHANNEL
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 23mOhm @ 20A, 10V
- Power Dissipation (Max)
- 104W (Tc)
- Series
- -
- Supplier Device Package
- TO-220
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 28nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1680pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 50A (Tc)