Taiwan Semiconductor Corporation TSM2303CX RFG

Product Details

Rds On (Max) @ Id, Vgs

760mOhm @ 200mA, 4.5V

Series

-

Power Dissipation (Max)

390mW (Ta)

FET Type

N-Channel

Supplier Device Package

X2-DFN0806-3

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

0.7nC @ 4.5V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

42.2pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

550mA (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Mounting Type

Surface Mount

Package / Case

3-XFDFN

Vgs(th) (Max) @ Id

950mV @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)