Taiwan Semiconductor Corporation TSM1N45DCS RLG

Product Details

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

500mA (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Vgs(th) (Max) @ Id

4.5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

10Ohm @ 250mA, 10V

Series

-

Power Dissipation (Max)

2.5W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-92

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

6.1nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

600V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

138pF @ 25V