Taiwan Semiconductor Corporation TSM15N50CZ C0G

Product Details

Series

π-MOSVIII

Power Dissipation (Max)

45W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220SIS

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

800V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1350pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Vgs(th) (Max) @ Id

4V @ 600µA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

1.7Ohm @ 3A, 10V