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Taiwan Semiconductor Corporation TSM150NB04LCR RLG
MOSFET SINGLE N-CHANNEL TRENCH
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 4836
Product Details
- Series
- -
- Power Dissipation (Max)
- 3.1W (Ta), 56W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 8-PDFN (5x6)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 18nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1110pF @ 30V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 6A (Ta), 27A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 4.5V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 30mOhm @ 6A, 10V