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Taiwan Semiconductor Corporation TSM10N60CZ C0G
MOSFET N-CHANNEL
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Power Dissipation (Max)
- 48W (Tc)
- Series
- -
- Supplier Device Package
- ITO-220
- FET Type
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 42nC @ 10V
- Vgs (Max)
- ±25V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2250pF @ 30V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 22A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 140mOhm @ 20A, 10V