Taiwan Semiconductor Corporation TSM089N08LCR RLG

Product Details

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

3.8mOhm @ 90A, 10V

Power Dissipation (Max)

3.9W (Ta), 180W (Tc)

Series

Automotive, AEC-Q101

Supplier Device Package

TO-252-4L

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

95.4nC @ 10V

Packaging

Digi-Reel®

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

4556pF @ 30V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Part Status

Active

Mounting Type

Surface Mount

Package / Case

TO-252-5, DPak (4 Leads + Tab), TO-252AD