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Taiwan Semiconductor Corporation TSM088NA03CR RLG
MOSFET N-CH 30V 61A 8PDFN
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 46mOhm @ 3.9A, 4.5V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 2.4W (Ta), 11.4W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PowerPAK® SC-70-6 Single
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 12nC @ 10V
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 350pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 6A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® SC-70-6
- Vgs(th) (Max) @ Id
- 1.4V @ 250µA