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Taiwan Semiconductor Corporation TSM080N03PQ56 RLG

MOSFET N-CH 30V 73A 8PDFN

Manufacturer
Taiwan Semiconductor Corporation
Datasheet
Price
0
Stock
4970

Product Details

Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
30V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
90pF @ 10V
FET Feature
Schottky Diode (Isolated)
Current - Continuous Drain (Id) @ 25°C
1A (Ta)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ Id
2.5V @ 1mA
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
400mOhm @ 1A, 10V
Series
-
Power Dissipation (Max)
1.25W (Ta)
FET Type
P-Channel
Supplier Device Package
TSMT6 (SC-95)
Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
1.7nC @ 5V