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Taiwan Semiconductor Corporation TSM061NA03CR RLG
MOSFET N-CH 30V 88A 8PDFN
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 230mOhm @ 2A, 10V
- Series
- OptiMOS™
- Power Dissipation (Max)
- 2W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- PG-TSOP-6-6
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 9.3nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 265pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 2A (Ta)
- Part Status
- Last Time Buy
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Vgs(th) (Max) @ Id
- 4V @ 218µA
- Operating Temperature
- -55°C ~ 150°C (TJ)