Taiwan Semiconductor Corporation TSM05N03CW RPG

Product Details

Package / Case

8-PowerTDFN

Vgs(th) (Max) @ Id

2.3V @ 1mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

2.1mOhm @ 30A, 10V

Series

-

Power Dissipation (Max)

1.7W (Ta), 38W (Tc)

FET Type

N-Channel

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

47.9nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3250pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

22A (Ta), 106A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount