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Taiwan Semiconductor Corporation TSM052N06PQ56 RLG

MOSFET N-CH 60V 100A 8PDFN

Manufacturer
Taiwan Semiconductor Corporation
Datasheet
Price
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Stock
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Product Details

FET Feature
-
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Part Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id
3V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
65mOhm @ 10A, 10V
Series
-
Power Dissipation (Max)
45W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-252, (D-Pak)
Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
10.5nC @ 4.5V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
60V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
1100pF @ 30V