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Taiwan Semiconductor Corporation TPAR3D S1G
DIODE AVALANCHE 200V 3A TO277A
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 2995
Product Details
- Reverse Recovery Time (trr)
- 1.2µs
- Current - Reverse Leakage @ Vr
- 10µA @ 400V
- Speed
- Standard Recovery >500ns, > 200mA (Io)
- Voltage - DC Reverse (Vr) (Max)
- 400V
- Series
- eSMP®
- Current - Average Rectified (Io)
- 2.1A (DC)
- Packaging
- Digi-Reel®
- Operating Temperature - Junction
- -55°C ~ 175°C
- Diode Type
- Avalanche
- Voltage - Forward (Vf) (Max) @ If
- 920mV @ 1.5A
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-277, 3-PowerDFN
- Base Part Number
- AS3PG
- Capacitance @ Vr, F
- 37pF @ 4V, 1MHz
- Supplier Device Package
- TO-277A (SMPC)