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Taiwan Semiconductor Corporation S1JLW RVG
DIODE GEN PURP 600V 1A SOD123W
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 3808
Product Details
- Supplier Device Package
- X1-DFN1006-2
- Reverse Recovery Time (trr)
- 50ns
- Current - Reverse Leakage @ Vr
- 1µA @ 240V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Voltage - DC Reverse (Vr) (Max)
- 350V
- Series
- -
- Current - Average Rectified (Io)
- 300mA (DC)
- Packaging
- Digi-Reel®
- Operating Temperature - Junction
- -55°C ~ 150°C
- Diode Type
- Standard
- Voltage - Forward (Vf) (Max) @ If
- 1.29V @ 200mA
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- 0402 (1006 Metric)
- Base Part Number
- BAV5004LP
- Capacitance @ Vr, F
- 2.5pF @ 0V, 1MHz