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Taiwan Semiconductor Corporation S10JCHR7G

DIODE GEN PURP 600V 10A DO214AB

Manufacturer
Taiwan Semiconductor Corporation
Datasheet
Price
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Stock
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Product Details

Package / Case
2-SMD, J-Lead
Capacitance @ Vr, F
-
Supplier Device Package
SJP
Reverse Recovery Time (trr)
50ns
Current - Reverse Leakage @ Vr
50µA @ 200V
Voltage - DC Reverse (Vr) (Max)
200V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io)
3A
Series
-
Operating Temperature - Junction
-40°C ~ 150°C
Packaging
Digi-Reel®
Voltage - Forward (Vf) (Max) @ If
980mV @ 3A
Diode Type
Standard
Part Status
Active
Mounting Type
Surface Mount