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Taiwan Semiconductor Corporation F1T6G A0G
DIODE GEN PURP 800V 1A TS-1
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.05
- Stock
- 0
Product Details
- Supplier Device Package
- DO-35
- Current - Reverse Leakage @ Vr
- 100nA @ 100V
- Voltage - DC Reverse (Vr) (Max)
- 100V
- Current - Average Rectified (Io)
- 100mA (DC)
- Speed
- Small Signal =< 200mA (Io), Any Speed
- Operating Temperature - Junction
- 125°C (Max)
- Series
- Automotive, AEC-Q101
- Voltage - Forward (Vf) (Max) @ If
- 1V @ 200mA
- Packaging
- Tape & Box (TB)
- Diode Type
- Schottky
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- DO-204AH, DO-35, Axial
- Capacitance @ Vr, F
- 2pF @ 1V, 1MHz