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Taiwan Semiconductor Corporation ESH1JM RSG
DIODE GEN PURP 600V 1A MICRO SMA
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 1318
Product Details
- Reverse Recovery Time (trr)
- 25ns
- Current - Reverse Leakage @ Vr
- 5µA @ 200V
- Voltage - DC Reverse (Vr) (Max)
- 200V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 4A
- Series
- -
- Operating Temperature - Junction
- -55°C ~ 175°C
- Packaging
- Digi-Reel®
- Voltage - Forward (Vf) (Max) @ If
- 875mV @ 4A
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- DO-214AB, SMC
- Capacitance @ Vr, F
- 65pF @ 4V, 1MHz
- Supplier Device Package
- DO-214AB (SMC)