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Taiwan Semiconductor Corporation ES3FB R5G
DIODE GEN PURP 300V 3A DO214AA
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 1208
Product Details
- Current - Average Rectified (Io)
- 3A
- Speed
- Standard Recovery >500ns, > 200mA (Io)
- Operating Temperature - Junction
- -55°C ~ 175°C
- Series
- Automotive, AEC-Q101, SBR®
- Voltage - Forward (Vf) (Max) @ If
- 600mV @ 3A
- Packaging
- Digi-Reel®
- Diode Type
- Super Barrier
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- PowerDI™ 5
- Capacitance @ Vr, F
- 110pF @ 4V, 1MHz
- Supplier Device Package
- PowerDI™ 5
- Current - Reverse Leakage @ Vr
- 60µA @ 60V
- Voltage - DC Reverse (Vr) (Max)
- 60V