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Taiwan Semiconductor Corporation ES3DBHR5G
DIODE GEN PURP 200V 3A DO214AA
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.21
- Stock
- 0
Product Details
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- R6, Axial
- Capacitance @ Vr, F
- 100pF @ 4V, 1MHz
- Supplier Device Package
- R-6
- Current - Reverse Leakage @ Vr
- 10µA @ 100V
- Voltage - DC Reverse (Vr) (Max)
- 100V
- Current - Average Rectified (Io)
- 6A
- Speed
- Standard Recovery >500ns, > 200mA (Io)
- Operating Temperature - Junction
- -55°C ~ 125°C
- Series
- -
- Voltage - Forward (Vf) (Max) @ If
- 1V @ 6A
- Packaging
- Cut Tape (CT)