Images are for reference only. See Product Specifications for product details

Taiwan Semiconductor Corporation BAV21W-G RHG

DIODE GEN PURP 200V 200MA SOD123

Manufacturer
Taiwan Semiconductor Corporation
Datasheet
Price
0
Stock
6000

Product Details

Supplier Device Package
MicroMELF
Reverse Recovery Time (trr)
50ns
Current - Reverse Leakage @ Vr
100nA @ 50V
Voltage - DC Reverse (Vr) (Max)
50V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io)
250mA (DC)
Series
Automotive, AEC-Q101
Operating Temperature - Junction
175°C (Max)
Packaging
Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If
1V @ 100mA
Diode Type
Standard
Part Status
Active
Mounting Type
Surface Mount
Package / Case
2-SMD, No Lead
Capacitance @ Vr, F
1.5pF @ 0V, 1MHz