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Taiwan Semiconductor Corporation BAV21W-G RHG
DIODE GEN PURP 200V 200MA SOD123
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 6000
Product Details
- Supplier Device Package
- MicroMELF
- Reverse Recovery Time (trr)
- 50ns
- Current - Reverse Leakage @ Vr
- 100nA @ 50V
- Voltage - DC Reverse (Vr) (Max)
- 50V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 250mA (DC)
- Series
- Automotive, AEC-Q101
- Operating Temperature - Junction
- 175°C (Max)
- Packaging
- Cut Tape (CT)
- Voltage - Forward (Vf) (Max) @ If
- 1V @ 100mA
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- 2-SMD, No Lead
- Capacitance @ Vr, F
- 1.5pF @ 0V, 1MHz