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Taiwan Semiconductor Corporation BAV19 A0G

DIODE GEN PURP 100V 200MA DO35

Manufacturer
Taiwan Semiconductor Corporation
Datasheet
Price
0.02
Stock
0

Product Details

Package / Case
DO-204AH, DO-35, Axial
Capacitance @ Vr, F
1.5pF @ 0V, 1MHz
Supplier Device Package
DO-35
Reverse Recovery Time (trr)
50ns
Current - Reverse Leakage @ Vr
100nA @ 20V
Voltage - DC Reverse (Vr) (Max)
20V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io)
250mA (DC)
Series
Automotive, AEC-Q101
Operating Temperature - Junction
175°C (Max)
Packaging
Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If
1V @ 100mA
Diode Type
Standard
Part Status
Active
Mounting Type
Through Hole