Images are for reference only. See Product Specifications for product details

STMicroelectronics STWA88N65M5

MOSFET N-CH 650V 84A TO-247

Manufacturer
STMicroelectronics
Datasheet
Price
18.8
Stock
0

Product Details

Series
-
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 20V
FET Type
N-Channel
Power Dissipation (Max)
270W (Tc)
Packaging
Tube
Supplier Device Package
HiP247™
Vgs (Max)
+25V, -10V
Gate Charge (Qg) (Max) @ Vgs
105nC @ 20V
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200V
FET Feature
-
Input Capacitance (Ciss) (Max) @ Vds
1700pF @ 400V
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Mounting Type
Through Hole
Drive Voltage (Max Rds On, Min Rds On)
20V
Package / Case
TO-247-3
Base Part Number
SCT30
Vgs(th) (Max) @ Id
2.6V @ 1mA (Typ)
Operating Temperature
-55°C ~ 200°C (TJ)