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STMicroelectronics STW70N65M2
MOSFET N-CH 650V 63A TO247-3
- Manufacturer
- STMicroelectronics
- Datasheet
- Price
- 8.6
- Stock
- 0
Product Details
- Power Dissipation (Max)
- 60W (Tc)
- Series
- CoolSiC™
- Supplier Device Package
- PG-TO247-3-41
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 5.3nC @ 18V
- Vgs (Max)
- +23V, -7V
- Drain to Source Voltage (Vdss)
- 1.2kV
- Technology
- SiC (Silicon Carbide Junction Transistor)
- Input Capacitance (Ciss) (Max) @ Vds
- 182pF @ 800V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 4.7A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 15V, 18V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 5.7V @ 1mA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 455mOhm @ 2A, 18V