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STMicroelectronics STW60N65M5

MOSFET N-CH 650V 46A TO-247

Manufacturer
STMicroelectronics
Datasheet
Price
11.93
Stock
659

Product Details

Technology
GaNFET (Gallium Nitride)
Input Capacitance (Ciss) (Max) @ Vds
600pF @ 400V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Surface Mount
Package / Case
3-PowerDFN
Vgs(th) (Max) @ Id
4.8V @ 700µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
85mOhm @ 16A, 10V
Series
TP65H070L
Power Dissipation (Max)
96W (Tc)
FET Type
N-Channel
Supplier Device Package
3-PQFN (8x8)
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
9.3nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
650V