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STMicroelectronics STW58N65DM2AG
MOSFET N-CH 650V 48A
- Manufacturer
- STMicroelectronics
- Datasheet
- Price
- 10.75
- Stock
- 597
Product Details
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 145nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 1200V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4765pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 14A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 5V @ 1mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.4Ohm @ 7A, 10V
- Series
- -
- Power Dissipation (Max)
- 625W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-247 [B]